Goford Semiconductor
Product No:
G50N03J
Manufacturer:
Package:
TO-251
Batch:
-
Description:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Quantity:
Payment Methods
Delivery Methods
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.57
0.57
10
0.49305
0.49305
100
0.341145
0.341145
500
0.285019
0.285019
1000
0.242564
0.242564
2000
0.21603
0.21603
5000
0.204658
0.204658
10000
0.189506
0.189506
50000
0.187625
0.187625
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Stub Leads, IPak |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
Power Dissipation (Max) | 48W (Tc) |
Supplier Device Package | TO-251 |
Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
Drain to Source Voltage (Vdss) | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 15 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |