Global Power Technology-GPT
Product No:
G52YT
Manufacturer:
Package:
SMA
Batch:
-
Description:
DIODE SIL CARBIDE 650V 5.8A SMA
Quantity:
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Mfr | Global Power Technology-GPT |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Cut Tape (CT) |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Product Status | Active |
Capacitance @ Vr, F | 116.75pF @ 0V, 1MHz |
Supplier Device Package | SMA |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 5.8A |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |