G69F

Goford Semiconductor

Product No:

G69F

Manufacturer:

Goford Semiconductor

Package:

6-DFN (2x2)

Batch:

-

Description:

P-12V,-16A,RD(MAX)<18M@-4.5V,VTH

Quantity:

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Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 4.5A, 4.5V
Power Dissipation (Max) 18W (Tc)
Supplier Device Package 6-DFN (2x2)
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V
Drain to Source Voltage (Vdss) 12 V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
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