GT035N10M

Goford Semiconductor

Product No:

GT035N10M

Manufacturer:

Goford Semiconductor

Package:

TO-263

Batch:

-

Description:

N100V, 190A,RD<3.5M@10V,VTH2V~4V

Quantity:

Payment Methods

wire transfer Paypal Alipay download1 paypal02

Delivery Methods

paypal03 paypal04 DHL2 sf1 UPS2 unnamed1 ems1

In Stock : 724

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.603

    2.603

  • 10

    2.16315

    2.16315

  • 100

    1.721305

    1.721305

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Power Dissipation (Max) 277W (Tc)
Supplier Device Package TO-263
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 6188 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Hot Sale