TP65H050G4WS
Transphorm
Product No:
TP65H050G4WS
Manufacturer:
Package:
TO-247-3
Batch:
-
Description:
650 V 34 A GAN FET
Quantity:
Payment Methods
Delivery Methods
In Stock : 333
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
13.642
13.642
10
12.0175
12.0175
100
10.393285
10.393285
500
9.418927
9.418927
1000
8.639433
8.639433
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Product Information
Parameter Info
User Guide
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Base Product Number | TP65H050 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Supplier Device Package | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
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